Resonance Conditions in Asymmetrical Rectangular Double-Barrier Structures under DC Bias Field
نویسندگان
چکیده
Analytical expressions for the transmission coefficient and the resonance condition are derived for the first time for the asymmetrical rectangular double-barrier structures with deep well when a dc bias field is applied. It is found that the unity resonance of the resonant tunneling with unity transmission occurs when both the phase difference condition for resonance (PDCR) and the maximum condition for the peak value (MCPV) hold simultaneously, while the under-unity resonance occurs that the peak value of transmission coefficient at resonance is below unity if only PDCR holds. Wave functions of an electron at the resonance level are calculated and the confining phenomena are confirmed.
منابع مشابه
DC Electric Field Effects on the Electron Dynamics in Double Rectangular Quantum Dots
The effect of a dc electric field on the temporal evolution of an electron in a double rectangular quantum dot is explored in this work. In the framework of the effective mass approximation, first-order scattering rates for interaction between confined electron-“free” electron and electron-longitudinal acoustic phonon at room temperature are calculated in the high tunneling regime, and used to ...
متن کاملAnalytical Expression for the Tunneling Time in Symmetrical Rectangular Double-Barrier Structures
An analytical expression for the electron tunneling time has been derived for symmetrical rectangular double-barrier structures. It gives values of the tunneling time equal to those calculated by the dwell time method for the resonant tunneling state. The obtained tunneling time is given by the sum of the time connected with the barrier layer width and the time connected with the well layer wid...
متن کاملAnnealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage
Co40Fe40B20 /MgO single and double barrier magnetic tunnel junctions MTJs were grown using target-facing-target sputtering for MgO barriers and conventional dc magnetron sputtering for Co40Fe40B20 ferromagnetic electrodes. Large tunnel magnetoresistance TMR ratios, 230% for single barrier MTJs and 120% for the double barrier MTJs, were obtained after postdeposition annealing in a field of 800 m...
متن کاملSpin and charge pumping in magnetic tunnel junctions with precessing magnetization: A nonequilibrium Green function approach
We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F I N or F I F F-ferromagnet; I-insulator; N-normal metal multilayers of nanoscale thickness attached to two normal-metal electrodes with no applied bias voltage between them. Both simple one-dimensional model, consisting of a single precessing spin and a potential barrier as the “sample,...
متن کاملUltralow-voltage field-ionization discharge on whiskered silicon nanowires for gas-sensing applications
Development of devices that can field-ionize gas molecules at low bias voltages may be essential for many applications such as ion mobility spectrometry1 and highly selective portable gas sensing. Recent developments in synthesis of dense nanostructures with ultrasharp tips offered promise to ionize gas molecules for their accurate fingerprinting, but their high operating voltages are not favou...
متن کامل